Electrothermal Reaction with Ammonia Allows Generation of n-Type Graphene

被引：0

|

作者：

Joan J. Carvajal

机构：

来源：

MRS Bulletin | 2009年 / 34卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

页码：475 / 476

页数：1

相关论文

共 50 条

[31] Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene
Park, Hyung-Youl
Yoon, Jin-Sang
Jeon, Jeaho
Kim, Jinok
Jo, Seo-Hyeon
Yu, Hyun-Yong
Lee, Sungjoo
Park, Jin-Hong
ORGANIC ELECTRONICS, 2015, 22 : 117 - 121
[32] QUANTUM THERMOMAGNETIC EFFECTS IN N-TYPE INSB AND N-TYPE INAS
GADZHIALIEV, MM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 833 - +
[33] OSCILLATIONS OF THE TRANSVERSE MAGNETORESISTANCE OF N-TYPE INSB AND N-TYPE INAS
KONDRATEV, MV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (02): : 224 - 225
[34] IONIZED IMPURITY SCATTERING IN N-TYPE GERMANIUM AND N-TYPE SILICON
ITO, R
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (11) : 1604 - &
[35] Solar hydrogen generation by nanoscale p-n junction of p-type molybdenum disulfide/n-type nitrogen-doped reduced graphene oxide
Wu, N. (nick.wu@mail.wvu.edu), 1600, American Chemical Society (135):
[36] Solar Hydrogen Generation by Nanoscale p-n Junction of p-type Molybdenum Disulfide/n-type Nitrogen-Doped Reduced Graphene Oxide
Meng, Fanke
Li, Jiangtian
Cushing, Scott K.
Zhi, Mingjia
Wu, Nianqiang
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2013, 135 (28) : 10286 - 10289
[37] Defect generation by radioactive decay of light elements in n-type silicon
Bollmann, J
Thieme, M
Weber, J
PHYSICA B-CONDENSED MATTER, 2006, 376 : 97 - 100
[38] PHENOMENON OF GENERATION OF OSCILLATIONS IN AN N-TYPE GERMANIUM PLATE DOPED WITH COPPER
KORNILOV, BV
SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (01): : 267 - +
[39] GENERATION AND DETECTION OF 1012-HZ PHONONS IN N-TYPE GAAS
CRANDALL, RS
SOLID STATE COMMUNICATIONS, 1969, 7 (16) : 1109 - &
[40] High order harmonic generation efficiency in n-type silicon and InP
Adorno, DP
Zarcone, M
Ferrante, G
LASER PHYSICS, 2001, 11 (02) : 291 - 295

← 1 2 3 4 5 →