Optimized Cu-Sn Wafer-Level Bonding Using Intermetallic Phase Characterization

The objective of this study is to optimize the Cu/Sn solid–liquid interdiffusion process for wafer-level bonding applications. To optimize the temperature profile of the bonding process, the formation of intermetallic compounds (IMCs) which takes place during the bonding process needs to be well understood and characterized. In this study, a simulation model for the development of IMCs and the unreacted remaining Sn thickness as a function of the bonding temperature profile was developed. With this accurate simulation model, we are able to predict the parameters which are critical for bonding process optimization. The initial characterization focuses on a kinetics model of the Cu3Sn thickness growth and the amount of Sn thickness that reacts with Cu to form IMCs. As-plated Cu/Sn samples were annealed using different temperatures (150°C to 300°C) and durations (0 min to 320 min). The kinetics model is then extracted from the measured thickness of IMCs of the annealed samples.