Kinetics of Convergence the Si(100) Surface Steps

被引:0
|
作者
M. Yu. Yesin
A. S. Deryabin
A. V. Kolesnikov
A. I. Nikiforov
机构
[1] Rzhanov Institute of Semiconductor Physics,
[2] Siberian Branch,undefined
[3] Russian Academy of Sciences,undefined
来源
关键词
molecular-beam epitaxy; reflection high-energy electron diffraction; surface; terraces; step; kink;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:609 / 615
页数:6
相关论文
共 50 条
  • [31] Atomic steps on the MgO(100) surface
    Lu, S. R.
    Yu, R.
    Zhu, J.
    PHYSICAL REVIEW B, 2013, 87 (16)
  • [32] Kinetics and thermodynamics of surface steps on semiconductors
    NTT Basic Research Laboratories, Atsugi-shi, Kanagawa 243-0198, Japan
    Crit Rev Solid Statae Mater Sci, 3 (227-263):
  • [33] Kinetics and thermodynamics of surface steps on semiconductors
    Ogino, T
    Hibino, H
    Homma, Y
    CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1999, 24 (03) : 227 - 263
  • [34] Kinetics of PEGMA grafted from Si(100) surface to form polymer brush
    Peng, J. -W.
    Deng, W. X.
    PLASTICS RUBBER AND COMPOSITES, 2010, 39 (02) : 83 - 85
  • [35] XPS study of the XeF2 adsorption kinetics of the Si(100) surface
    Aliev, V.Sh.
    Baklanov, M.R.
    Bukhtiyarov, V.I.
    Poverkhnost Fizika Khimiya Mekhanika, 1992, (03):
  • [36] Growth kinetics of aluminum on the Si(100) surface studied by scanning tunneling microscopy
    Zhu, CX
    Misawa, S
    Tsukahara, S
    Fujiwara, S
    SURFACE SCIENCE, 1996, 357 (1-3) : 926 - 930
  • [37] Why Si(100) steps are rougher after etching
    Williams, FJ
    Aldao, CM
    Gong, Y
    Weaver, JH
    PHYSICAL REVIEW B, 1997, 55 (20): : 13829 - 13834
  • [38] Atomistic simulation of steps on the MgO(100) surface
    Harding, JH
    Harris, DJ
    Parker, SC
    SURFACE SCIENCE, 1999, 422 (1-3) : L183 - L187
  • [40] BIASED SECONDARY-ELECTRON IMAGING OF MONATOMIC SURFACE STEPS ON VICINAL SI(100) IN A UHV STEM
    DRUCKER, J
    KRISHNAMURTHY, M
    HEMBREE, G
    ULTRAMICROSCOPY, 1991, 35 (3-4) : 323 - 328