A Time-Domain Model for the Study of High-Frequency Wheelset–Track Interaction

被引:2
|
作者
Fang W. [1 ]
Martinez-Casas J. [2 ]
Bruni S. [1 ]
机构
[1] Mechanical Engineering Department, Politecnico di Milano, Milan
[2] Centro de Investigación en Ingeniería Mecánica, Universitat Politècnica de València, Camino de Vera s/n, Valencia
关键词
Flexible track; Flexible wheelset; High-frequency dynamics; Train–track interaction;
D O I
10.1007/s40864-017-0049-1
中图分类号
学科分类号
摘要
A mathematical model of dynamic wheelset–track interaction is proposed in this paper. The model is defined in the time domain in order to introduce and correctly evaluate nonlinear and time-variant phenomena related to the contact model and boundary conditions which play a very important role in rail surface degradation phenomena. The complete model can be divided into three main components: the model of the wheelset, the model of the track and the model of wheel–rail contact forces. In the paper, the wheelset is described as a rotating flexible body, and the gyroscopic and inertial effects associated with wheelset rotation are introduced to this model using an ‘Eulerian’ finite element approach based on 3D quadratic solid elements. The discrete supported track is modelled using finite Timoshenko beam element, which takes into account both the vertical and the lateral rail vibration valid up to 1500 Hz. The wheelset and the track are coupled by means of a contact model based on the nonlinear Hertz and Kalker theories. The flexible components of the interaction model make it possible to describe the train–track dynamics in a relatively high-frequency range, which allows the investigation of specific aspects such as rail corrugation. Some numerical results are presented in terms of contact forces and rail–wheel vibration speed in the paper. The effect of wheelset and track flexibility in specific frequency range on train–track interaction dynamics is briefly discussed. © 2017, The Author(s).
引用
收藏
页码:203 / 213
页数:10
相关论文
共 50 条
  • [41] Automatic recognition and suppression of high-frequency noises in time-frequency domain
    Processing Center of GRI, Urumqi 830011, China
    Shiyou Diqiu Wuli Kantan, 2006, 1 (93-96):
  • [42] Frequency– and Time-domain BEM Analysis of Rigid Track on a Half-Space with Vibration Barriers
    Wolfgang Hubert
    Klaus Friedrich
    Gero Pflanz
    Günther Schmid
    Meccanica, 2001, 36 : 421 - 436
  • [43] A unified approach for time-domain and frequency-domain finite element model updating
    Li, Dan
    Zhou, Jiajun
    He, Xinhao
    MECHANICAL SYSTEMS AND SIGNAL PROCESSING, 2025, 227
  • [44] THE EQUIVALENCE OF MODEL-FOLLOWING SYSTEMS DESIGNED IN THE TIME-DOMAIN AND FREQUENCY-DOMAIN
    HSU, YT
    TSAI, TP
    JUANG, YT
    IEEE TRANSACTIONS ON AUTOMATIC CONTROL, 1994, 39 (08) : 1722 - 1726
  • [45] Time-domain slicing optical frequency domain reflectometry
    Bai, Qing
    Shen, Zhen
    Wu, Luxuan
    Liang, Changshuo
    Wang, Yu
    Liu, Xin
    Jin, Baoquan
    OPTICS LETTERS, 2024, 49 (10) : 2541 - 2544
  • [46] Time-domain characteristics and frequency domain of panda hoot
    Han, Chunlian
    Shan, Fang
    Cao, Jialin
    Wang, Pengyan
    Zhang, Hemin
    Shengxue Xuebao/Acta Acustica, 2000, 25 (04): : 364 - 370
  • [47] ON FREQUENCY-DOMAIN AND TIME-DOMAIN PHASE UNWRAPPING
    ZIMMERMANN, KP
    PROCEEDINGS OF THE IEEE, 1987, 75 (04) : 519 - 520
  • [48] Time-domain and frequency-domain differential calorimetry
    Ferrari, C
    Salvetti, G
    Tognoni, E
    Tombari, E
    JOURNAL OF THERMAL ANALYSIS, 1996, 47 (01): : 75 - 85
  • [49] High order discontinuous Galerkin methods for time-domain and frequency-domain nanophotonics
    Chaumont-Frelet, T.
    Descombes, S.
    Gobe, A.
    Moghtader, Mostafa Javadzadeh
    Lanteri, S.
    Scheid, C.
    Schmitt, N.
    Viquerat, J.
    METANANO 2019, 2020, 1461
  • [50] High-frequency response in Sr1−xCaxTiO3 powders studied by terahertz time-domain spectroscopy
    Shujie Duan
    Qiwu Shi
    Wanxia Huang
    Yaxin Zhang
    Shen Qiao
    Yang Xiao
    Journal of Materials Science: Materials in Electronics, 2016, 27 : 6318 - 6324