Surface energy and crystal structure of nanowhiskers of III–V semiconductor compounds

被引：0
|
作者：
N. V. Sibirev
M. A. Timofeeva
A. D. Bol’shakov
M. V. Nazarenko
V. G. Dubrovskiĭ
机构：
[1] Russian Academy of Sciences,St. Petersburg Academic University—Nanotechnology Research and Education Centre
[2] St. Petersburg State Polytechnical University,Ioffe Physical
[3] Russian Academy of Sciences,Technical Institute
来源：
Physics of the Solid State | 2010年 / 52卷
关键词：
GaAs; Surface Energy; GaSb; Critical Radius; Triple Line;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A theoretical model has been proposed for calculating the surface energy of nanowhiskers in the nearest neighbor approximation. The surface energy has been calculated for different faces of III–V semiconductor crystals with cubic and hexagonal structures. The effect of the formation of the hexagonal wurtzite phase in nanowhiskers of III–V semiconductor compounds has been considered using the obtained data. Estimates for the critical radius of the phase transition in III–V semiconductor nanowhiskers are presented.
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页码：1531 / 1538
页数：7
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