Effect of the low-temperature (20-60°C) heating of silicon on its microhardness

被引：0
|
作者：
Tetelbaum D.I. [1 ]
Kuril'chik E.V. [1 ]
Pokhil G.P. [2 ]
Kuzmina Pyatkina A.A. [3 ]
机构：
[1] Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod
[2] Skobel'tsyn Institute of Nuclear Physics, Moscow State University, Moscow
[3] OAO KB Ikar, Nizhni Novgorod
来源：
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2013年 / 7卷 / 6期
关键词：
Defect System; Surface Investigation; Neutron Technique; Long Range Effect; Synchrotron Neutron Tech;
D O I：
10.1134/S1027451013060219
中图分类号：
学科分类号：
摘要：
Changes in the microhardness of silicon samples exposed to temperatures of 20-60°C are studied. It is found that the microhardness increases; this effect is preserved at room temperature for 20 min and non-monotonically depends on the temperature and exposure time (the changes are maximal at ∼40°C and ∼100 s, respectively). The microhardness of samples with native oxide removed does not change. The results are discussed in terms of a model of processes in the silicon-oxide system, which was previously proposed for the case of irradiation of silicon with light. The practical importance of the effect is discussed. © 2013 Pleiades Publishing, Ltd.
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页码：1110 / 1113
页数：3
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