Determination of trace elements in a silicon single crystal

被引：0
|
作者：
T. Takeuchi
Y. Nakano
T. Fukuda
I. Hirai
A. Osawa
N. Toyokura
机构：
[1] Kyoto University,Research Reactor Institute
[2] Fujitsu Ltd.,undefined
来源：
Journal of Radioanalytical and Nuclear Chemistry | 1997年 / 216卷
关键词：
Silicon; Physical Chemistry; Quartz; Inorganic Chemistry; Activation Analysis;
D O I：
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中图分类号：
学科分类号：
摘要：
Instrumental neutron activation analysis was applied to the determination of trace impurity elements in a silicon single crystal. Impurity concentrations in polysilicon melt were compared with those in a single crystal. Impurity concentrations in artificial quartz were also compared with those in natural quartz. Segregation coefficients in Au, Ir and Sb were determined at different concentrations. The segregation coefficient of an element in a silicon single crystal is constant over a critical concentration, it becomes larger gradually under the critical one, and at last it becomes larger than 1.
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页码：165 / 169
页数：4
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