THE DETERMINATION OF THE CONCENTRATION OF TRACE ELEMENTS IN SILICON BY THE ATOMIC ABSORPTION METHOD

被引：0

作者：

Muravskaya, N. P. ^{[1
]}

Ermakova, Ya. I. ^{[1
]}

Ivanov, A. V. ^{[1
]}

机构：

[1] All Russia Res Inst Optophys Measurements VNIIOFI, Moscow, Russia

来源：

MEASUREMENT TECHNIQUES | 2012年 / 54卷 / 11期

关键词：

silicon; concentration; trace elements; quantitative analysis; analytical control; Hall effect; marked-atoms method; activation analysis; atomic absorption spectrometry;

D O I：

10.1007/s11018-012-9881-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Methods of analyzing the content of trace elements in silicon are considered. Silicon wafers in which the content of iron, copper and manganese were to be determined were investigated using a method based on the Hall effect, radiochemical methods and atomic absorption with electrothermal atomization. The results obtained are compared with the aim of determining the most accurate method of analysis.

引用

页码：1303 / 1312

页数：10

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