Germanium-lead perovskite light-emitting diodes

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作者
Dexin Yang
Guoling Zhang
Runchen Lai
Yao Cheng
Yaxiao Lian
Min Rao
Dexuan Huo
Dongchen Lan
Baodan Zhao
Dawei Di
机构
[1] Zhejiang University,State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics
[2] Hangzhou Dianzi University,Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials & Environmental Engineering
[3] Zhejiang University,College of Electrical Engineering
[4] Zhejiang University,Key Laboratory of Excited
[5] University of Cambridge,State Materials of Zhejiang Province
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Reducing environmental impact is a key challenge for perovskite optoelectronics, as most high-performance devices are based on potentially toxic lead-halide perovskites. For photovoltaic solar cells, tin-lead (Sn–Pb) perovskite materials provide a promising solution for reducing toxicity. However, Sn–Pb perovskites typically exhibit low luminescence efficiencies, and are not ideal for light-emitting applications. Here we demonstrate highly luminescent germanium-lead (Ge–Pb) perovskite films with photoluminescence quantum efficiencies (PLQEs) of up to ~71%, showing a considerable relative improvement of ~34% over similarly prepared Ge-free, Pb-based perovskite films. In our initial demonstration of Ge–Pb perovskite LEDs, we achieve external quantum efficiencies (EQEs) of up to ~13.1% at high brightness (~1900 cd m−2), a step forward for reduced-toxicity perovskite LEDs. Our findings offer a new solution for developing eco-friendly light-emitting technologies based on perovskite semiconductors.
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