Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy

被引：0
|
作者：
N. S. Volkova
A. P. Gorshkov
D. O. Filatov
D. S. Abramkin
机构：
[1] Lobachevsky State University of Nizhni Novgorod,Physico
[2] Lobachevsky State University of Nizhni Novgorod,Technical Research Institute
[3] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
来源：
JETP Letters | 2014年 / 100卷
关键词：
JETP Letter; Thermal Emission; Deep Level Transient Spectroscopy; Vapor Phase Epitaxy; Nonequilibrium Charge Carrier;
D O I：
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中图分类号：
学科分类号：
摘要：
A model describing the emission of photoexcited electrons and holes from an array of InAs quantum dots into the GaAs matrix is suggested. The analytical expression obtained for the emission efficiency takes into account the thermal emission of charge carriers into the GaAs matrix and two-dimensional states of the InAs wetting layer, tunneling and thermally activated tunneling escape, and electron transitions between the quantum-confinement levels in the conduction band of InAs. The temperature dependences of the photosensitivity in the regions of the ground-state and first excited-state optical transitions in InAs/GaAs quantum dots grown by gas-phase epitaxy are investigated experimentally. A number of quantum dot parameters are determined by fitting the results of a theoretical calculation to the experimental data. Good agreement between the theoretical and experimental results is obtained in this way.
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页码：156 / 161
页数：5
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