Disorder and localization of electrons in bilayer graphene

被引：0
|
作者：
Y.-X. Wang
S.-J. Xiong
机构：
[1] National Laboratory of Solid State Microstructures and Department of Physics,
[2] Nanjing University,undefined
来源：
The European Physical Journal B | 2009年 / 67卷
关键词：
72.80.Ng Disordered solids; 73.63.-b Electronic transport in nanoscale materials and structures; 81.05.Uw Carbon, diamond, graphite; 73.23.-b Electronic transport in mesoscopic systems;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We investigate localization behavior of electron states in bilayer graphene formed with the Bernal stacking in the presence of various types of disorder (site-energy, in-plane hopping and inter-plane hopping) by the use of the transfer matrix method. It is found that all the states are localized at various kinds of disorder (site-energy, in-plane hopping and inter-plane hopping) except that in the case of inter-plane-hopping disorder the states at the zero energy are critical. The implications of the results are discussed.
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页码：63 / 69
页数：6
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