Strongly modulated conductivity in a perovskite ferroelectric field-effect transistor

被引：0
|
作者：
I. A. Veselovskii
I. V. Grekhov
L. A. Delimova
I. A. Liniichuk
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Technical Physics Letters | 2001年 / 27卷
关键词：
Perovskite; Fermi Level; Channel Conductivity; Gate Insulator; Jump Length;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An all-perovskite field-effect transistor with a (Pb0.95La0.05)(Zr0.2Ti0.8)O3 gate insulator exhibits a strongly modulated room-temperature conductivity in a La1.94Sr0.06CuO4 channel. The channel conductivity is controlled by the hopping mechanism with variable jump length and determined by the Coulomb gap at the Fermi level.
引用
收藏
页码：17 / 19
页数：2
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