Synthesis of carbon nitride films by low-power inductively coupled plasma-activated transport reactions from a solid carbon source

被引：0

作者：

C. Popov

M.F. Plass

A. Bergmaier

W. Kulisch

机构：

[1] University of Kassel,

[2] Institute of Technical Physics,undefined

[3] Heinrich-Plett-Str. 40,undefined

[4] 34109 Kassel,undefined

[5] Germany (Fax: +49-561/804-4136,undefined

[6] E-mail: popov@schottky.physik.uni-kassel.de),undefined

[7] Technical University of Munich,undefined

[8] Dept. of Physics E 12,undefined

[9] James-Franck-Str.,undefined

[10] 85747 Garching,undefined

[11] Germany,undefined

来源：

Applied Physics A | 1999年 / 69卷

关键词：

PACS: 81.15.Gh; 68.55.-a;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Thin films of carbon nitride were prepared by low-power inductively coupled plasma chemical vapor deposition from a solid carbon source by utilizing transport reactions. The maximum deposition rate achieved was 10 nm/min and depended mainly on the substrate position in the reactor. The nitrogen fraction in the films was not so sensitive to the process parameters and was at about 0.5 for all experiments as measured by Auger electron spectroscopy (AES) and elastic recoil detection (ERD) analysis. The chemical bonding structure studied by Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) showed the presence of triple, double and single bonds between carbon and nitrogen atoms.

引用

页码：241 / 244

页数：3

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