Study of the structural quality of heteroepitaxial silicon-on-sapphire structures by high-resolution X-ray diffraction, X-ray reflectivity, and electron microscopy

被引：0
|
作者：
A. E. Blagov
A. L. Vasiliev
A. S. Golubeva
I. A. Ivanov
O. A. Kondratev
Yu. V. Pisarevsky
M. Yu. Presnyakov
P. A. Prosekov
A. Yu. Seregin
机构：
[1] Russian Academy of Sciences,Shubnikov Institute of Crystallography
[2] National Research Centre “Kurchatov Institute”,undefined
来源：
Crystallography Reports | 2014年 / 59卷
关键词：
Epitaxial Layer; Crystallography Report; Sapphire Substrate; Electron Density Profile; Double Crystal;
D O I：
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中图分类号：
学科分类号：
摘要：
Heteroepitaxial silicon-on-sapphire (SOS) structures have been studied by high-resolution X-ray diffraction, X-ray reflectivity, electron microscopy, and electron diffraction. These methods yielded a large amount of complementary data on the defect structure of both the sapphire substrate and the silicon film, including integral and local (at the atomic-resolution level) information about the substrate, film, and sapphire-silicon interface.
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页码：315 / 322
页数：7
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