Controlling the Polarization of Light in InGaAs/GaAs/δ-Mn Ferromagnetic Diode Structures

被引：0
|
作者：
Zaitsev S.V. [1 ]
机构：
[1] Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Moscow oblast, Chernogolovka
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2024年 / 88卷 / 02期
关键词：
Semiconducting indium - Semiconducting indium gallium arsenide - Semiconductor quantum wells;
D O I：
10.1134/S106287382370524X
中图分类号：
学科分类号：
摘要：
A weak magnetic field is used to study the effect voltage has on the circular polarization of light in light-emitting diode structures with InGaAs/GaAs/δ-Mn quantum wells and remote δ layers of Mn magnetic impurities (spacers with thickness dS = 2−5 nm). The weakening of circular polarization upon raising the applied voltage testifies to the strong contribution from the stationary mechanism of carrier polarization by the exchange field of the δ-Mn layer. © Pleiades Publishing, Ltd. 2024.
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页码：208 / 212
页数：4
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