Controlling the Polarization of Light in InGaAs/GaAs/δ-Mn Ferromagnetic Diode Structures

被引：0
|
作者：
Zaitsev S.V. [1 ]
机构：
[1] Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Moscow oblast, Chernogolovka
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2024年 / 88卷 / 02期
关键词：
Semiconducting indium - Semiconducting indium gallium arsenide - Semiconductor quantum wells;
D O I：
10.1134/S106287382370524X
中图分类号：
学科分类号：
摘要：
A weak magnetic field is used to study the effect voltage has on the circular polarization of light in light-emitting diode structures with InGaAs/GaAs/δ-Mn quantum wells and remote δ layers of Mn magnetic impurities (spacers with thickness dS = 2−5 nm). The weakening of circular polarization upon raising the applied voltage testifies to the strong contribution from the stationary mechanism of carrier polarization by the exchange field of the δ-Mn layer. © Pleiades Publishing, Ltd. 2024.
引用
收藏
页码：208 / 212
页数：4
相关论文
共 50 条
  • [1] Tunneling and injection in ferromagnetic structures InGaAs/GaAs/(Ga,Mn)As and InGaAs/n +-GaAs/(Ga,Mn)As
    Malysheva, E. I.
    Dorokhin, M. V.
    Zdoroveyshchev, A. V.
    Ved', M. V.
    PHYSICS OF THE SOLID STATE, 2016, 58 (11) : 2271 - 2276
  • [2] Mechanisms of Carrier Polarization in Ferromagnetic InGaAs/GaAs/δ-〈Mn〉 Heterostructures
    Zaitsev S.
    Bulletin of the Russian Academy of Sciences: Physics, 2022, 86 (04) : 443 - 447
  • [3] Tunneling and injection in ferromagnetic structures InGaAs/GaAs/(Ga,Mn)As and InGaAs/n+-GaAs/(Ga,Mn)As
    E. I. Malysheva
    M. V. Dorokhin
    A. V. Zdoroveyshchev
    M. V. Ved’
    Physics of the Solid State, 2016, 58 : 2271 - 2276
  • [4] Coherent Spin Dynamics in the Nonuniform Ferromagnetic InGaAs/GaAs/δ-Mn Structures
    Zaitsev, S. V.
    Dremov, V. V.
    Stolyarov, V. S.
    SEMICONDUCTORS, 2024, 58 (01) : 77 - 85
  • [5] Optical Detection of the Cyclotron Resonance in Inhomogeneous Ferromagnetic Structures InGaAs/GaAs/δ-Mn
    Zaitsev, S., V
    Dremov, V. V.
    Stolyarov, V. S.
    JETP LETTERS, 2022, 116 (04) : 232 - 239
  • [6] Optical Detection of the Cyclotron Resonance in Inhomogeneous Ferromagnetic Structures InGaAs/GaAs/δ-〈Mn〉
    S. V. Zaitsev
    V. V. Dremov
    V. S. Stolyarov
    JETP Letters, 2022, 116 : 232 - 239
  • [7] Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well
    S. V. Zaitsev
    M. V. Dorokhin
    A. S. Brichkin
    O. V. Vikhrova
    Yu. A. Danilov
    B. N. Zvonkov
    V. D. Kulakovskii
    JETP Letters, 2010, 90 : 658 - 662
  • [8] Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well
    Zaitsev, S. V.
    Dorokhin, M. V.
    Brichkin, A. S.
    Vikhrova, O. V.
    Danilov, Yu. A.
    Zvonkov, B. N.
    Kulakovskii, V. D.
    JETP LETTERS, 2010, 90 (10) : 658 - 662
  • [9] The circular polarization inversion in δ⟨Mn⟩/InGaAs/GaAs light-emitting diodes
    Dorokhin, M. V.
    Danilov, Yu. A.
    Zvonkov, B. N.
    Gonzalez Balanta, M. A.
    Brasil, M. J. S. P.
    Iikawa, F.
    Mendes, U. C.
    Brum, J. A.
    Demina, P. B.
    Malysheva, E. I.
    Zdoroveyshchev, A. V.
    Kudrin, A. V.
    APPLIED PHYSICS LETTERS, 2015, 107 (04)
  • [10] Proximity Effect in InGaAs/GaAs/CoPt Ferromagnetic Structures
    Zaitsev S.V.
    Bulletin of the Russian Academy of Sciences: Physics, 2023, 87 (02) : 182 - 186
12345