Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer

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作者：
Takafumi Hayashi
Yuta Kawase
Noriaki Nagata
Takashi Senga
Sho Iwayama
Motoaki Iwaya
Tetsuya Takeuchi
Satoshi Kamiyama
Isamu Akasaki
Takahiro Matsumoto
机构：
[1] Meijo University,Faculty of Science and Technology
[2] Nagoya University,Akasaki Research Center
[3] Nagoya City University,Graduate School of Design & Architecture
[4] Nagoya City University,Graduate School of Medical Sciences
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Scientific Reports | / 7卷
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摘要：
This study investigated electron beam laser excitation in the UV region using a GaN/AlGaN multiquantum well (MQW) active layer. Laser emission was observed when the GaN/AlGaN MQW was excited by an electron beam, with a wavelength of approximately 353 nm and a threshold power density of 230 kW/cm2. A comparison of optical pumping and electron beam pumping demonstrated that the rate of generation of electron-hole pairs when using electron beam excitation was approximately one quarter that of light excitation.
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