The crystallization and electrical properties of lead-based ferroelectric thin films for uncooled pyroelectric infrared detector

Epitaxially grown and polycrystalline PT, PLT and PZT thin films with thickness from 1 to 2 μm have been prepared on Pt/Ti/SiO2/Si substrates by means of the modified sol-gel spin-coating technique. The ferroelectric thin films have good crystallization behavior, excellent dielectric and pyroelectric properties. The pyroelectric coefficients of PT and PLT thin films are 2.9 × 10-8 C/cm2 k and (3.37-5.25) × 10-8 C/cm2 k, respectively. The figures of merit for voltage responsivity of PT and PLT thin films (Fl) are 0.60 × 10-10 Ccm/J and (0.79-1.13) × 10-8 Ccm/J, respectively. The figures of merit for current responsivity of these films are 9.0 × 10-9 Ccm/J and (10.5-16.0) × 10-9 Ccm/J, and the figures of merit for detectivity of these films are 0.74 × 10-8 Ccm/J and (0.79-1.13) × 10-8 Ccm/J, respectively.© 2004 Kluwer Academic Publishers.