Origin of Degradation of the CaF2/BaF2 Buffer Layers on Si(111)

被引：0
|
作者：
I. G. Neizvestny
D. V. Ishchenko
I. O. Akhundov
S. P. Suprun
O. E. Tereshchenko
机构：
[1] Rzhanov Institute of Semiconductor Physics,
[2] Siberian Branch,undefined
[3] Russian Academy of Sciences,undefined
来源：
Doklady Physics | 2020年 / 65卷
关键词：
calcium fluoride on silicon; adhesion; epitaxy; interface.;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：15 / 17
页数：2
相关论文
共 50 条
  • [31] A MICROSTRUCTURAL STUDY OF CRYSTALLINE DEFECTS IN PBSE/BAF2/CAF2 ON (111)SI GROWN BY MOLECULAR-BEAM EPITAXY
    MATHET, V
    GALTIER, P
    NGUYENVANDAU, F
    PADELETTI, G
    OLIVIER, J
    JOURNAL OF CRYSTAL GROWTH, 1993, 132 (1-2) : 241 - 249
  • [32] INFRARED PROPERTIES OF CAF2, SRF2, AND BAF2
    KAISER, W
    SPITZER, WG
    HOWARTH, LE
    KAISER, RH
    PHYSICAL REVIEW, 1962, 127 (06): : 1950 - &
  • [33] Growth studies of CaF2 and BaF2/CaF2 on (100) silicon using RHEED and SEM
    Fang, XM
    McCann, PJ
    Liu, WK
    THIN SOLID FILMS, 1996, 272 (01) : 87 - 92
  • [34] Molecular beam epitaxial growth of Eu-doped CaF2 and BaF2 on Si
    Fang, XM
    Chatterjee, T
    McCann, PJ
    Liu, WK
    Santos, MB
    Shan, W
    Song, JJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2267 - 2270
  • [35] Molecular beam epitaxial growth of Eu-doped CaF2 and BaF2 on Si
    J Vac Sci Technol B, 3 (2267):
  • [36] EPITAXIAL-GROWTH OF CAF2/SI/CAF2 ON SI(111)
    CHO, CC
    LIU, HY
    KEENAN, JA
    PARK, KH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (4A): : L530 - L532
  • [37] Study of the features of BaF2 heteroepitaxy on CaF2/Si(100) layers obtained in the high-temperature growth mode
    Filimonova N.I.
    Ilyushin V.A.
    Velichko A.A.
    Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2017, 11 (1) : 130 - 134
  • [38] CaF2 surface passivation of lead selenide grown on BaF2
    Mukherjee, Shaibal
    Li, D.
    Bi, G.
    Ma, J.
    Elizondo, S. L.
    Gautam, A.
    Shi, Z.
    MICROELECTRONIC ENGINEERING, 2011, 88 (03) : 314 - 317
  • [39] Ab initio calculations of the hydrogen centres in CaF2 and BaF2
    Shi, H.
    Eglitis, R. I.
    Borstel, G.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (05)
  • [40] MEASUREMENT AND SIMULATION OF PLANAR CHANNELING OF PROTONS IN CAF2 AND BAF2
    SAITOH, K
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1985, 54 (01) : 152 - 161
12345