Electron states in (AlAs)M(AlxGa1−xAs)N superlattices

Electronic states have been studied for energies within the conduction band of (AlAs)M(AlxGa1−xAs)N (111) superlattices. Calculations were carried out in terms of the model of the matching of envelope functions at heterointerfaces, generalized to the case of the structures under consideration. Miniband spectra, symmetry and localization of wave functions, and the probabilities of interband IR absorption were analyzed. The probabilities are shown to be substantial not only for light polarized along the superlattice growth axis, but also for normal incidence on the structure surface. The superlattices studied are shown to be promising materials for IR photodetectors.