Influence of quantum resonance-percolation trajectories in a disordered i layer on the critical current of a Josephson S-I-S junction

被引：0
|
作者：
Kirpichenkov V.Ya. [1 ,2 ]
Kirpichenkova N.V. [3 ]
Lozin O.I. [2 ]
机构：
[1] Research Institute of Physics, Southern Federal University
[2] South Russian State Technical University
[3] Novocherkassk Military High School of Communications
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2011年 / 75卷 / 8期
关键词：
Tunnel Junction; Random Inho Mogeneities; Tunnel Resonance; Tunnel Transparency; Colation Trajectory;
D O I：
10.3103/S1062873811080156
中图分类号：
学科分类号：
摘要：
Formulae for critical current and the magnitude of its mesoscopic structural fluctuations in the tunneling resonance energy range of an S-I-S (S = superconductor, I = insulator) tunnel junction with a weak structural disorder (low impurity density) in an I layer at temperature T = 0 are obtained in the form of sums describing the quantum resonant-percolation trajectories [1] that randomly form in a disordered I layer and the connecting opposite S banks of a contact. © 2011 Allerton Press, Inc.
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页码：1052 / 1054
页数：2
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    ALEKSEEV, BF
    ANISIMOV, VV
    BELONOGOV, AM
    [J]. IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1981, 45 (03): : 548 - 550
  • [42] Mo6S3I6 molecular wires: From a one-dimensional quantum fluid to self-organized critical self-assembled networks
    Gadermaier, Christoph
    Strle, Jure
    Uplaznik, Marko
    Vengust, Damjan
    Bercic, Bostjan
    Mihailovic, Dragan
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2010, 247 (11-12): : 3014 - 3017
  • [43] Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si
    Inoue, D.
    Wan, Y.
    Jung, D.
    Norman, J.
    Shang, C.
    Nishiyama, N.
    Arai, S.
    Gossard, A. C.
    Bowers, J. E.
    [J]. APPLIED PHYSICS LETTERS, 2018, 113 (09)
  • [44] PERFORMANCE DEPENDENCE OF A S-SI/A-SI DOUBLE JUNCTION SOLAR-CELL ON THE QUALITY OF THE A-SI=C=H BUFFER LAYER AT P+-SI=C=H/I-A-SI=H INTERFACE
    CHAUDHURI, P
    RAY, S
    BATABYAL, AK
    BARUA, AK
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1995, 36 (01) : 45 - 50
  • [45] Erratum: Expression of concern: Influence of GaAs/InAs quasi-monolayer on the structural and optical properties of InAs/GaAs quantum dots, Jae-Young Leem, Minhyun Jeon, Jewon Lee, Guansik Cho, Cheul-Ro Lee, Jong Su Kim, Se-Kyung Kang, S.I. Ban, J.I. Lee, Hyung Koun Cho, Journal of Crystal Growth, Volume 252, Issue 4, May 2003, Pages 493–498 (Influence of GaAs/InAs quasi-monolayer on the structural and optical properties of InAs/GaAs quantum dots (2003) 252(4) (493–498), (S0022024803008662), (10.1016/S0022-0248(03)00866-2))
    Derby, Jeffrey J.
    [J]. Journal of Crystal Growth, 2021, 560-561
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