Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

被引：0
|
作者：
Miguel M. Ugeda
Aaron J. Bradley
Su-Fei Shi
Felipe H. da Jornada
Yi Zhang
Diana Y. Qiu
Wei Ruan
Sung-Kwan Mo
Zahid Hussain
Zhi-Xun Shen
Feng Wang
Steven G. Louie
Michael F. Crommie
机构：
[1] University of California at Berkeley,Department of Physics
[2] Berkeley,Materials Sciences Division
[3] Lawrence Berkeley National Laboratory,Department of Physics
[4] Berkeley,Departments of Physics and Applied Physics
[5] Advanced Light Source,undefined
[6] Lawrence Berkeley National Laboratory,undefined
[7] Berkeley,undefined
[8] Stanford Institute for Materials and Energy Sciences,undefined
[9] SLAC National Accelerator Laboratory,undefined
[10] Menlo Park,undefined
[11] State Key Laboratory of Low Dimensional Quantum Physics,undefined
[12] Tsinghua University,undefined
[13] Geballe Laboratory for Advanced Materials,undefined
[14] Stanford University,undefined
[15] Stanford,undefined
[16] Kavli Energy NanoSciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory,undefined
[17] Berkeley,undefined
来源：
Nature Materials | 2014年 / 13卷
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摘要：
Transition metal dichalcogenides are attracting widespread attention for their appealing optoelectronic properties. Using a combination of numerical and experimental techniques, the exciton binding energy is now determined for MoSe2 on graphene.
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页码：1091 / 1095
页数：4
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