Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

被引：0
|
作者：
A. V. Govorkov
A. Ya. Polyakov
T. G. Yugova
N. B. Smirnov
E. A. Petrova
M. V. Mezhennyi
A. V. Markov
I. -H. Lee
S. J. Pearton
机构：
[1] Federal State Unitary Enterprise Giredmet,State Scientific Center of the Russian Federation
[2] Jeonbuk National University,undefined
[3] University of Florida,undefined
来源：
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2007年 / 1卷
关键词：
Dislocation Density; Neutron Technique; Scanning Electron Micro; Deep Level Transient Spectroscopy; Gallium Nitride;
D O I：
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中图分类号：
学科分类号：
摘要：
The relation between the density of etch pits revealed in GaN by etching in a KOH/NaOH eutectic and the density of dislocations determined by transmission electron microscopy (TEM) is studied along with the relation between the density of dislocations and the density of dark spot defects observed in GaN by microcathodoluminescence (MCL) and electron-beam-induced current (EBIC). It is demonstrated that selective etching is a reliable rapid method for the determination of the type and density of dislocations in GaN in the range 106–108 cm−2, while MCL and EBIC can be used for the rapid nondestructive determination of the density of dislocations in the range 106–108 cm−2. It is also found that some deep electron and hole traps are related to dislocations.
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页码：380 / 385
页数：5
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