Mass density of glassy Pd80Si20 during low-temperature light ion irradiation

被引：0
|
作者：
G. Schumacher
R. C. Birtcher
L. E. Rehn
机构：
[1] Materials Science Division,Argonne National Laboratory
[2] Present address: Hahn-Meitner-Institut,undefined
来源：
Journal of Materials Research | 2001年 / 16卷
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摘要：
Changes in mass density of amorphous Pd80Si20 were monitored in situ during irradiation with He2+ and H+ ions at temperatures below 100 K and during subsequent thermal treatment. The mass density decreased with increasing ion fluence and exponentially approached a saturation value of −1.2%, corresponding to a recombination volume of 190 atomic volumes. The initial swelling rate was 2.3 atomic volumes/displaced atom. The mass density of the irradiated material increased during subsequent thermal treatment, and the irradiation-induced decrease of the mass density recovered completely at room temperature.
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页码：2788 / 2792
页数：4
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