Negative magnetoresistance in Cr-containing diamond-like carbon-based heterostructures

被引:0
|
作者
Juan A. Colón Santana
V. Singh
V. Palshin
E. M. Handberg
A. G. Petukhov
Y. B. Losovyj
A. Sokolov
Ihor Ketsman
机构
[1] University of Nebraska—Lincoln,Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience
[2] Louisiana State University,Center for Advanced Microstructures and Devices
[3] South Dakota School of Mines and Technology,Department of Physics
来源
Applied Physics A | 2010年 / 98卷
关键词
Forward Bias; Chromium Carbide; XANES Spectrum; Negative Magnetoresistance; Heterojunction Diode;
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学科分类号
摘要
We have characterized the local structure around the Cr atom, as a function of Cr content, in films of chromium-doped hydrogenated amorphous diamond-like carbon (Cr-DLC) synthesized by plasma-enhanced chemical vapor deposition (PECVD). The composition appears to be related to the structure and forward bias magnetoresistance in heterojunction devices. Chromium in diamond-like carbon (DLC) has a chemical state much like chromium carbide and, at low Cr content, the Cr is dissolved in an amorphous DLC matrix forming an atomic-scale composite. At higher Cr content, Cr is present as nano-composite and chromium carbide precipitates preferentially form at the surface of the film. In these films of higher chromium concentration, a large coefficient of negative magnetoresistance is observed in heterojunction devices with n-type silicon.
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页码:811 / 819
页数:8
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