Tailoring supercurrent confinement in graphene bilayer weak links

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作者
Rainer Kraft
Jens Mohrmann
Renjun Du
Pranauv Balaji Selvasundaram
Muhammad Irfan
Umut Nefta Kanilmaz
Fan Wu
Detlef Beckmann
Hilbert von Löhneysen
Ralph Krupke
Anton Akhmerov
Igor Gornyi
Romain Danneau
机构
[1] Karlsruhe Institute of Technology,Institute of Nanotechnology
[2] Technical University Darmstadt,Department of Materials and Earth Sciences
[3] Delft University of Technology,Kavli Institute of Nanoscience
[4] Pakistan Institute of Engineering and Applied Sciences,Department of Physics and Applied Mathematics
[5] Karlsruhe Institute of Technology,Institute for Condensed Matter Theory
[6] National University of Defense Technology,College of Optoelectronic Science and Engineering
[7] Karlsruhe Institute of Technology,Institute of Physics
[8] Karlsruhe Institute of Technology,Institute for Solid State Physics
[9] A.F. Ioe Physico-Technical Institute,undefined
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摘要
The Josephson effect is one of the most studied macroscopic quantum phenomena in condensed matter physics and has been an essential part of the quantum technologies development over the last decades. It is already used in many applications such as magnetometry, metrology, quantum computing, detectors or electronic refrigeration. However, developing devices in which the induced superconductivity can be monitored, both spatially and in its magnitude, remains a serious challenge. In this work, we have used local gates to control confinement, amplitude and density profile of the supercurrent induced in one-dimensional nanoscale constrictions, defined in bilayer graphene-hexagonal boron nitride van der Waals heterostructures. The combination of resistance gate maps, out-of-equilibrium transport, magnetic interferometry measurements, analytical and numerical modelling enables us to explore highly tunable superconducting weak links. Our study opens the path way to design more complex superconducting circuits based on this principle, such as electronic interferometers or transition-edge sensors.
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