Low-Temperature Characteristics of a Silicon-Based Sub-THz Detector

被引：0
|
作者：
Khisameeva A.R. [1 ]
Shchepetilnikov A.V. [1 ]
Fedotova Y.V. [1 ]
Dremin A.A. [1 ]
Kukushkin I.V. [1 ]
机构：
[1] Institute of Solid State Physics, Russian Academy of Sciences, Moscow oblast, Chernogolovka
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2023年 / 87卷 / 02期
基金：
俄罗斯科学基金会;
关键词：
Liquefied gases - Room temperature - Silicon - Temperature distribution;
D O I：
10.3103/S1062873822700824
中图分类号：
学科分类号：
摘要：
Abstract: Characteristics of a silicon-based sub-THz plasmonic detector are studied in a wide range of temperatures down to that of liquid nitrogen. The temperature dependences of the detector’s sensitivity are obtained and its noise characteristics are studied. The frequency dependence of the sensitivity in the range of 70–120 GHz is measured at room temperature, and its maximum of 25 V/W is reached at 96 GHz. The noise equivalent power of the studied detector is estimated by assuming that Nyquist noise is the main source of noise, and the values of this power vary from 2 × 10−10 W Hz−1/2 at room temperature to 2 × 10−11 W Hz−1/2 at the temperature of liquid nitrogen. The current–voltage characteristics of the sub-THz detector are studied as well. It is found there is a singularity in the differential resistance and sensitivity that depends on the DC voltage applied during the transition from room to nitrogen temperature. © 2023, Allerton Press, Inc.
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页码：145 / 149
页数：4
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