Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy

被引：0
|
作者：
A. G. U. Perera
Y. F. Lao
P. S. Wijewarnasuriya
S. S. Krishna
机构：
[1] Georgia State University,Department of Physics and Astronomy
[2] U.S. Army Research Laboratory,Center for High Technology Materials, Department of Electrical and Computer Engineering
[3] University of New Mexico,undefined
来源：
Journal of Electronic Materials | 2016年 / 45卷
关键词：
Heterojunction; internal photoemission; III-V; II-VI;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The band offset at the interface of a heterojunction is one of the most important parameters determining the characteristics of devices constructed from heterojunction. Accurate knowledge of band offsets and their temperature dependence will allow one to simulate and predict the device performances. We present a temperature-dependent internal-photoemission spectroscopy (TDIPS) for studying the band offsets. Applications of the TDIPS into III–V and II–VI materials are discussed.
引用
收藏
页码：4626 / 4630
页数：4
相关论文
共 50 条
  • [41] Strain Effects and Temperature-Dependent Phase Stability of II-VI Semiconductor Nanostructures
    Patil, Sunil
    Wen, Bin
    Melnik, R. V. N.
    PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 303 - 304
  • [42] Temperature-dependent zero-field splitting in a copper(II) dimer studied by EPR
    Fedin, Matvey V.
    Zhilina, Ekaterina F.
    Chizhov, Dmitrii L.
    Apolonskaya, Inna A.
    Aleksandrov, Grigory G.
    Kiskin, Mikhail A.
    Sidorov, Aleksei A.
    Bogomyakov, Artem S.
    Romanenko, Galina V.
    Eremenko, Igor L.
    Novotortsev, Vladimir M.
    Charushin, Valery N.
    DALTON TRANSACTIONS, 2013, 42 (13) : 4513 - 4521
  • [43] TEMPERATURE-DEPENDENT FAR-INFRARED REFLECTANCE OF LAYER STRUCTURED III-VI COMPOUNDS
    JULIEN, C
    EDDRIEF, M
    BALKANSKI, M
    CHEVY, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 13 (03): : 253 - 259
  • [44] Temperature-dependent high-resolution photoemission spectroscopy of YbXCu4 (X=In, Cd, Mg)
    Sato, H
    Nishikawa, Y
    Nagasaki, F
    Fujino, H
    Takeda, Y
    Arita, M
    Shimada, K
    Namatame, H
    Kimura, A
    Taniguchi, M
    Hiraoka, K
    Kojima, K
    SURFACE REVIEW AND LETTERS, 2002, 9 (02) : 1079 - 1083
  • [45] TEMPERATURE-DEPENDENT INTERFACE EVOLUTION - MODELING OF CORE-LEVEL PHOTOEMISSION RESULTS FOR V/GE(111)
    BUTERA, RA
    DELGIUDICE, M
    WEAVER, JH
    PHYSICAL REVIEW B, 1987, 36 (09): : 4754 - 4760
  • [46] Temperature-Dependent Deliquescent and Efflorescent Properties of Methanesulfonate Sodium Studied by ATR-FTIR Spectroscopy
    Zeng, Guang
    Kelley, Judas
    Kish, J. Duncan
    Liu, Yong
    JOURNAL OF PHYSICAL CHEMISTRY A, 2014, 118 (03): : 583 - 591
  • [47] Phase transitions of surface-stabilized liquid crystal studied by temperature-dependent FTIR spectroscopy
    Cheng, Yu-Chuan
    Sun, Li
    Zhao, Chun
    Wang, Xu
    Xu, Wei-Qing
    Zhao, Bing
    Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, 2007, 27 (06): : 1071 - 1073
  • [48] Temperature-Dependent Formation of Redox Sites in Molybdenum Trioxide Studied by Electron Paramagnetic Resonance Spectroscopy
    Tan, Tian
    Chen, Ming
    Su, Ji-Hu
    Du, Jiang-Feng
    CHINESE JOURNAL OF CHEMICAL PHYSICS, 2019, 32 (06) : 657 - 660
  • [49] Phase transitions of surface-stabilized liquid crystal studied by temperature-dependent FTIR spectroscopy
    Cheng Yu-chuan
    Sun Li
    Zhao Chun
    Wang Xu
    Xu Wei-qing
    Zhao Bing
    SPECTROSCOPY AND SPECTRAL ANALYSIS, 2007, 27 (06) : 1071 - 1073
  • [50] Temperature-dependent vibrational dynamics of molecules studied by time-resolved broadband terahertz spectroscopy
    Upadhya, PC
    Shen, YC
    Davies, AG
    Linfield, EH
    CONFERENCE DIGEST OF THE 2004 JOINT 29TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 12TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, 2004, : 511 - 512
12345