Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy

被引：0
|
作者：
A. G. U. Perera
Y. F. Lao
P. S. Wijewarnasuriya
S. S. Krishna
机构：
[1] Georgia State University,Department of Physics and Astronomy
[2] U.S. Army Research Laboratory,Center for High Technology Materials, Department of Electrical and Computer Engineering
[3] University of New Mexico,undefined
来源：
Journal of Electronic Materials | 2016年 / 45卷
关键词：
Heterojunction; internal photoemission; III-V; II-VI;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The band offset at the interface of a heterojunction is one of the most important parameters determining the characteristics of devices constructed from heterojunction. Accurate knowledge of band offsets and their temperature dependence will allow one to simulate and predict the device performances. We present a temperature-dependent internal-photoemission spectroscopy (TDIPS) for studying the band offsets. Applications of the TDIPS into III–V and II–VI materials are discussed.
引用
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页码：4626 / 4630
页数：4
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