Broadband Rectification of Microwave Current in Magnetic Tunnel Junctions with Perpendicular Magnetic Anisotropy

被引:0
|
作者
Kiseleva K.V. [1 ,2 ]
Kichin G.A. [1 ]
Skirdkov P.N. [1 ,3 ]
Zvezdin K.A. [1 ,3 ]
机构
[1] New Spintronic Technologies, Russian Quantum Center, Skolkovo
[2] Skolkovo Institute of Science and Technology (Skoltech), Skolkovo
[3] Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
基金
俄罗斯科学基金会;
关键词
easy-cone state; magnetic tunnel junction (MTJ); spin-transfer diode effect (STDE); spin-transfer ferromagnetic resonance (ST-FMR); surface perpendicular magnetic anisotropy;
D O I
10.1134/S1062873823705032
中图分类号
学科分类号
摘要
Abstract: Spin-transfer ferromagnetic resonance in a planar external magnetic field is used to perform an experimental study of the effect produced by broadband rectification of a microwave current in magnetic tunnel junctions with perpendicular magnetic anisotropy. It is found that the parameters of broadband rectification (frequency range, rectified voltage, and the region of the mode of ferromagnetic resonance) depend on the size and its shape of the sample. The maximum rectified voltage is observed on a round elliptical sample of 100 × 150 nm. At the same time, the widest operating frequency range of approximately 2 GHz was observed on strongly elliptical MTJs with sizes of 75 × 250 nm2. © Pleiades Publishing, Ltd. 2024. ISSN 1062-8738, Bulletin of the Russian Academy of Sciences: Physics, 2024, Vol. 88, No. 1, pp. 92–96. Pleiades Publishing, Ltd., 2024.
引用
收藏
页码:92 / 96
页数:4
相关论文
共 50 条
  • [1] Size-dependent enhancement of passive microwave rectification in magnetic tunnel junctions with perpendicular magnetic anisotropy
    Sidi El Valli, A.
    Iurchuk, V.
    Lezier, G.
    Bendjeddou, I.
    Lebrun, R.
    Lamard, N.
    Litvinenko, A.
    Langer, J.
    Wrona, J.
    Vila, L.
    Sousa, R.
    Prejbeanu, I. L.
    Dieny, B.
    Ebels, U.
    [J]. APPLIED PHYSICS LETTERS, 2022, 120 (01)
  • [2] Double magnetic tunnel junctions with perpendicular anisotropy.
    Cuchet, L.
    Sousa, R. C.
    Auffret, S.
    Prejbeanu, I. L.
    Dieny, B.
    [J]. 2015 IEEE MAGNETICS CONFERENCE (INTERMAG), 2015,
  • [3] Dependence of the vortex formation process on the perpendicular magnetic anisotropy constant in perpendicular magnetic tunnel junctions
    Yang, Maosen
    Fang, Liang
    Chi, Yaqing
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (01)
  • [4] Magnetic tunnel junctions with Co-based perpendicular magnetic anisotropy multilayers
    Tadisina, Z. R.
    Natarajarathinam, A.
    Gupta, S.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2010, 28 (04): : 973 - 978
  • [5] Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions
    Nozaki, T.
    Shiota, Y.
    Shiraishi, M.
    Shinjo, T.
    Suzuki, Y.
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (02)
  • [6] Predictive materials and structures design of perpendicular magnetic anisotropy in magnetic tunnel junctions
    Du, Wei
    Liu, Mengli
    Han, Fengxuan
    Su, Hua
    Zhang, Huaiwu
    Liu, Bo
    Meng, Hao
    Tang, Xiaoli
    [J]. ACTA MATERIALIA, 2022, 233
  • [7] Voltage-induced switching in magnetic tunnel junctions with perpendicular magnetic anisotropy
    Wang, W. G.
    Chen, C. L.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (07)
  • [8] Immunity of nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy to ionizing radiation
    Montoya, Eric Arturo
    Chen, Jen-Ru
    Ngelale, Randy
    Lee, Han Kyu
    Tseng, Hsin-Wei
    Wan, Lei
    Yang, En
    Braganca, Patrick
    Boyraz, Ozdal
    Bagherzadeh, Nader
    Nilsson, Mikael
    Krivorotov, Ilya N.
    [J]. SCIENTIFIC REPORTS, 2020, 10 (01)
  • [10] Immunity of nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy to ionizing radiation
    Eric Arturo Montoya
    Jen-Ru Chen
    Randy Ngelale
    Han Kyu Lee
    Hsin-Wei Tseng
    Lei Wan
    En Yang
    Patrick Braganca
    Ozdal Boyraz
    Nader Bagherzadeh
    Mikael Nilsson
    Ilya N. Krivorotov
    [J]. Scientific Reports, 10