Magnetic tunnel junctions with Co-based perpendicular magnetic anisotropy multilayers

被引:16
|
作者
Tadisina, Z. R. [1 ]
Natarajarathinam, A. [1 ]
Gupta, S. [1 ]
机构
[1] Univ Alabama, MINT Ctr, Tuscaloosa, AL 35487 USA
来源
关键词
ROOM-TEMPERATURE; CO/NI MULTILAYERS; MAGNETORESISTANCE; REVERSAL;
D O I
10.1116/1.3430549
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Magnetic CoFeB/MgO/CoFeB-based tunnel junctions with perpendicular magnetic anisotropy Co/M multilayers (M=Ni, Pd, Pt) have been investigated as a function of structural and magnetic properties. Magnetometry, ferromagnetic resonance, x-ray diffraction, stress tests, and local electrode atom probe tomography were carried out primarily on Co/Ni multilayers. A statistical design of experiments was conducted to optimize the perpendicular magnetic anisotropy and damping parameter a of these multilayers. Seed layers, thickness, and thickness ratios are all critical to achieve perpendicular behavior. Perpendicular MgO-based magnetic tunnel junctions with Co/Ni and Co/Pd reference and free layers were fabricated and tested. Sharp MR-H switching characteristics were observed for the Co/Pd multilayers, and a somewhat softer transition was observed for the Co/Ni multilayer with a Cu seed, which did not have as high a perpendicular anisotropy. Tunneling magnetoresistance (TMR) values were limited to about 10%, primarily because the fcc-bcc-fcc transition does not promote the "MgO giant TMR" symmetry filtering effect. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3430549]
引用
收藏
页码:973 / 978
页数:6
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