Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

被引：18
|
作者：
Kugler, Zoe [1 ]
Drewello, Volker [1 ]
Schaefers, Markus [1 ]
Schmalhorst, Jan [1 ]
Reiss, Guenter [1 ]
Thomas, Andy [1 ]
机构：
[1] Univ Bielefeld, Dept Phys, D-33615 Bielefeld, Germany
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2011年 / 323卷 / 02期
关键词：
Perpendicular anisotropy; Magnetic tunnel junction; Spinelectronic; ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I：
10.1016/j.jmmm.2010.08.038
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions(MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11% at room temperature and 18.5% at 13K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy. (C) 2010 Elsevier B. V. All rights reserved.
引用
收藏
页码：198 / 201
页数：4
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