Effect of RF Power on Structural, Magnetic, and Optical Properties of CoFe2O4 Thin Films

The thin films of CoFe2O4 were deposited on glass substrates by radio-frequency (RF) sputtering. The effect of RF power variation from 60–120 W on the structure, magnetic, and optical properties of the as-deposited films and films annealed at 500 °C was studied. The magnetic parameters of the film, i.e., in-plane coercivity (Hc), saturation magnetization (Ms), and remanence (Mr) increase as RF power is increased from 60 to 80 W followed by a decreasing trend with further increase in RF power to 120 W. Annealing of the film significantly improves the magnetic properties. The largest grain size and the best crystallinity of the film are obtained for the film deposited at 80 W of RF power. The thin films exhibited 70–80% optical transmittance. Optical band gap (Eg) depends on the RF power and grain size, and it varies between 2.08 and 2.16 eV for the as-deposited films and between 2.16 and 2.30 eV for the annealed films. The study shows that RF power used for depositing the film has strong effect on the microstructure and properties of the film.