Generation-recombination instabilities in thin-film structures

被引:0
|
作者
V. V. Kolobaev
机构
[1] Moscow Power Engineering Institute,
来源
Semiconductors | 1999年 / 33卷
关键词
Magnetic Material; Electromagnetism; Resistance Structure; Differential Resistance; Negative Differential Resistance;
D O I
暂无
中图分类号
学科分类号
摘要
The possibility of negative differential resistance, which appears in symmetric thin-film metal-semiconductor-metal structures, is discussed. A model, which can explain to first approximation why generation-recombination processes that take place in the bulk of this sample during bipolar injection should lead to bistability, is proposed. It is shown that the design and use of these negative differential resistance structures could lead to promising new devices for detecting and processing information.
引用
收藏
页码:410 / 411
页数:1
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