Investigation of Inhomogeneites in Epitaxial AlxGa1−xN Layers Grown on Sapphire

被引：0
|
作者：
Vladimir V. Tretyakov
Sergey A. Rukolaine
Alexandr S. Usikov
Serge V. Makarov
机构：
[1] A.F. Ioffe Physico-Technical Institute,
[2] St. Petersburg,undefined
[3] Russia,undefined
来源：
Microchimica Acta | 2000年 / 132卷
关键词：
Key words: EPMA; depth profiling; cathodoluminescence; dimple grinding; AlGaN epitaxial layers.;
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学科分类号：
摘要：
 Procedures for the preparation of bevels and the determination of their geometrical parameters have been developed. Using these procedures study of compositional and optical spatially resolved inhomogeneities of AlxGa1−xN layers grown on (0001) sapphire have been studied by EPMA and cathodolu-minescence. It has been found that the nonuniform distribution in depth of Al in epitaxial layers grown under constant conditions is connected with presence of stresses in the layer.
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页码：361 / 364
页数：3
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