Efficient generation of the first waveguide mode in the InGaAs/GaAs/InGaP heterolaser

被引：0
|
作者：
A. A. Biryukov
B. N. Zvonkov
S. M. Nekorkin
V. Ya. Aleshkin
A. A. Dubinov
V. V. Kocharovskiĭ
Vl. V. Kocharovskiĭ
机构：
[1] Nizhni Novgorod State University,Research Physicotechnical Institute
[2] Russian Academy of Sciences,Institute for Physics of Microstructures
[3] Texas A&M University,Department of Physics
[4] Russian Academy of Sciences,Institute of Applied Physics
来源：
Semiconductors | 2008年 / 42卷
关键词：
42.55.Px; 42.65.An; 42.70.Nq; 78.67.De;
D O I：
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中图分类号：
学科分类号：
摘要：
Generation of the first excited transverse mode (TE1) in a new InGaAs/GaAs/InGaP diode heterolaser with a thin InGaP layer at the waveguide center was studied. This laser design decreases the competition of the first and fundamental modes and provides TE1 mode lasing at a threshold current comparable to that of an ordinary laser oscillating at the fundamental TE0 mode.
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页码：354 / 357
页数：3
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