The resonant tunneling of holes through double-barrier structures with InAs QDs at the center of a GaAs quantum well

被引：0
|
作者：
E. N. Morozova
O. N. Makarovskii
V. A. Volkov
Yu. V. Dubrovskii
L. Turyanska
E. E. Vdovin
A. Patané
L. Eaves
M. Henini
机构：
[1] Russian Academy of Sciences,Institute of Microelectronics Technology and High Purity Materials
[2] University of Nottingham,The School of Physics and Astronomy
[3] Russian Academy of Sciences,Institute of Radio Engineering and Electronics
来源：
Semiconductors | 2005年 / 39卷
关键词：
GaAs; Magnetic Material; Electromagnetism; Resonance Peak; Resonant Tunneling;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of InAs quantum dots (QDs) grown in the center of a GaAs quantum well on the tunneling characteristics of resonant-tunneling diodes based on p-AlAs/GaAs/AlAs heterostructures is studied. The introduction of QDs results in a shift and broadening of resonance peaks in the current-voltage characteristics of the diodes; however, this effect is found to be strongly dependent on the number of the 2D subband involved in the tunneling. The obtained dependence is attributed to origination of the fluctuation potential in the vicinity of the QD layer.
引用
收藏
页码：543 / 546
页数：3
相关论文
共 50 条
  • [1] The resonant tunneling of holes through double-barrier structures with InAs QDs at the center of a GaAs quantum well
    Morozova, EN
    Makarovskii, ON
    Volkov, VA
    Dubrovskii, YV
    Turyanska, L
    Vdovin, EE
    Patané, A
    Eaves, L
    Henini, M
    [J]. SEMICONDUCTORS, 2005, 39 (05) : 543 - 546
  • [2] RESONANT TUNNELING IN DOUBLE-BARRIER PARABOLIC WELL STRUCTURES
    NEOFOTISTOS, G
    GUO, H
    DIFF, K
    GUNTON, JD
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) : 745 - 749
  • [3] Resonant tunneling through a double-barrier quantum well in a transverse magnetic field
    A. Yu. Serov
    G. G. Zegrya
    [J]. Journal of Experimental and Theoretical Physics, 2004, 99 : 147 - 156
  • [4] Resonant tunneling through a double-barrier quantum well in a transverse magnetic field
    Serov, AY
    Zegrya, GG
    [J]. JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2004, 99 (01) : 147 - 156
  • [5] Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters
    Lin, SD
    Lee, CP
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) : 2952 - 2956
  • [6] Resonant tunneling through double-barrier structures on graphene
    邓伟胤
    朱瑞
    肖运昌
    邓文基
    [J]. Chinese Physics B, 2014, (01) : 378 - 382
  • [7] RESONANT TUNNELING THROUGH AMORPHOUS DOUBLE-BARRIER STRUCTURES
    YAMAMOTO, H
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 138 (01): : K71 - K73
  • [8] Resonant tunneling through double-barrier structures on graphene
    Deng Wei-Yin
    Zhu Rui
    Xiao Yun-Chang
    Deng Wen-Ji
    [J]. CHINESE PHYSICS B, 2014, 23 (01)
  • [9] THEORY OF MAGNETOTUNNELING THROUGH DONORS IN THE QUANTUM-WELL OF DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES
    FROMHOLD, TM
    SHEARD, FW
    EAVES, L
    [J]. ACTA PHYSICA POLONICA A, 1992, 82 (05) : 737 - 740
  • [10] Dependence of resonant interband tunneling current on barrier and well width in InAs/AlSb/GaSb/AlSb/InAs double-barrier structures
    Kitabayashi, H
    Waho, T
    Yamamoto, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (3B): : 1807 - 1810
12345