Low-Temperature Transport Properties of Bi-Substituted β-As2Te3 Compounds

被引:0
|
作者
J. -B. Vaney
J. Carreaud
G. Delaizir
C. Morin
J. Monnier
E. Alleno
A. Piarristeguy
A. Pradel
A. P. Gonçalves
E. B. Lopes
C. Candolfi
A. Dauscher
B. Lenoir
机构
[1] Institut Jean Lamour (IJL),SPCTS
[2] UMR 7198 CNRS,C2TN Instituto Superior Técnico
[3] Université de Lorraine,undefined
[4] UMR CNRS 7315,undefined
[5] Université de Limoges,undefined
[6] Institut de Chimie et des Matériaux de Paris Est (ICMPE),undefined
[7] UMR 7182 CNRS,undefined
[8] CMTR,undefined
[9] Institut Charles Gerhardt (ICG),undefined
[10] UMR 5253 CNRS,undefined
[11] Université Montpellier 2,undefined
[12] Universidade Técnica de Lisboa,undefined
来源
关键词
Thermoelectric materials; arsenic telluride; metastable thermoelectric phase;
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学科分类号
摘要
β-As2Te3 belongs to the family of Bi2Te3-based alloys, a well-known class of efficient thermoelectric materials around room temperature. As2Te3 exists in two allotropic configurations: α- and β-As2Te3, of which only the latter crystallizes in the same rhombohedral structure as Bi2Te3. Herein, we report on substitution of Bi for As in the As2−xBixTe3 system with x = 0.0, 0.015, 0.025, and 0.035. These samples have been characterized by x-ray diffraction and scanning electron microscopy. The transport properties have been measured at low temperatures (5 K to 300 K) in both directions, parallel and perpendicular to the pressing direction. The results are compared with those obtained in previous study on samples substituted by Sn. Compared with Sn, Bi allows for a clear decrease in electrical resistivity while maintaining the thermal conductivity below 1 W/(m K) over the whole temperature range. As a result, a comparable peak ZT value near 0.2 was obtained at room temperature.
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页码:1786 / 1791
页数:5
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