Domain and Switching Control of the Bulk Photovoltaic Effect in Epitaxial BiFeO3 Thin Films

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David S. Knoche
Yeseul Yun
Niranjan Ramakrishnegowda
Lutz Mühlenbein
Xinye Li
Akash Bhatnagar
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[1] Zentrum für Innovationskompetenz SiLi-nano,
[2] Martin-Luther-Universität Halle-Wittenberg,undefined
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Absence of inversion symmetry is the underlying origin of ferroelectricity, piezoelectricity, and the bulk photovoltaic (BPV) effect, as a result of which they are inextricably linked. However, till now, only the piezoelectric effects (inverse) have been commonly utilized for probing ferroelectric characteristics such as domain arrangements and resultant polarization orientation. The bulk photovoltaic effect, despite sharing same relation with the symmetry as piezoelectricity, has been mostly perceived as an outcome of ferroelectricity and not as a possible analytical method. In this work, we investigate the development of BPV characteristics, i.e. amplitude and angular dependency of short-circuit current, as the ferroelastic domain arrangement is varied by applying electric fields in planar devices of BiFeO3 films. A rather sensitive co-dependency was observed from measurements on sample with ordered and disordered domain arrangements. Analysis of the photovoltaic response manifested in a mathematical model to estimate the proportion of switched and un-switched regions. The results unravel the potential utility of BPV effect to trace the orientation of the polarization vectors (direction and amplitude) in areas much larger than that can be accommodated in probe-based techniques.
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