Electron Microscopy Study of Surface Islands in Epitaxial Ge3Sb2Te6 Layer Grown on a Silicon Substrate

被引：0
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作者：
Yu. S. Zaytseva
N. I. Borgardt
A. S. Prikhodko
E. Zallo
R. Calarko
机构：
[1] National Research University of Electronic Technology MIET,
[2] Paul Drude Institut für Festkörperelektronik,undefined
[3] Walter Schottky Institut,undefined
[4] Physik Department,undefined
[5] Technische Universität München,undefined
来源：
Crystallography Reports | 2021年 / 66卷
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页码：687 / 693
页数：6
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