Edge photoluminescence of single-crystal silicon at room temperature

被引：0
|
作者：
E. G. Gule
E. B. Kaganovich
I. M. Kizyak
E. G. Manoilov
S. V. Svechnikov
机构：
[1] National Academy of Sciences of Ukraine,Lashkarev Institute of Semiconductor Physics
来源：
Semiconductors | 2005年 / 39卷
关键词：
Silicon; Magnetic Material; Surface State; Electromagnetism; Edge Emission;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The edge photoluminescence of single-crystal silicon (c-Si) with a peak at ∼1.09 eV at room temperature is observed for structures that consist of nanocrystalline silicon (nc-Si) and c-Si. The structures are obtained by pulsed-laser deposition of an nc-Si film onto a c-Si substrate. The photoluminescence signal increases as both the density of surface states at the nc-Si/c-Si boundary and the scattering of the edge emission from c-Si in the nc-Si film decreases.
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页码：406 / 408
页数：2
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