The effect of a thermoelectric field on a current-voltage characteristic of the p-Ge-n-GaAs heterojunction

被引：0
|
作者：
M. M. Gadzhialiev
Z. Sh. Pirmagomedov
T. N. Éfendieva
机构：
[1] Russian Academy of Sciences,Amirkhanov Institute of Physics, Dagestan Scientific Center
来源：
Semiconductors | 2004年 / 38卷
关键词：
Temperature Gradient; Heat Flow; Rectification Factor; Magnetic Material; Electromagnetism;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Current-voltage characteristics, which emerge under the effect of oppositely directed temperature gradients, are investigated for “long” Ge-GaAs p-n junctions. The rectification factor increases depending on counter heat flows. This effect is attributed to a thermoelectric field forming at the heterointerface.
引用
收藏
页码：1302 / 1303
页数：1
相关论文
共 50 条
  • [31] FORWARD BRANCH OF THE CURRENT-VOLTAGE CHARACTERISTIC OF P-PI-NU-N STRUCTURES BASED ON GAAS-FE
    VILISOV, AA
    GAMAN, VI
    DIAMANT, VM
    FUKS, GM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (02): : 239 - 241
  • [32] Instability of current and N-shaped current-voltage characteristic in a silicon p-i-n diode subjected to a magnetic field
    Kamilov, I. K.
    Aliev, K. M.
    Aliev, B. G.
    Ibragimov, Kh. O.
    Abakarova, N. S.
    SEMICONDUCTORS, 2007, 41 (08) : 965 - 969
  • [33] CURRENT-VOLTAGE CHARACTERISTICS OF PARA-GE-CDS HETEROJUNCTION DIODES
    DUNCAN, W
    LAMB, J
    MCINTOSH, KG
    SMELLIE, AR
    APPLIED PHYSICS LETTERS, 1973, 23 (06) : 330 - 332
  • [34] THEORY OF CURRENT-VOLTAGE CHARACTERISTIC OF HIGH-VOLTAGE P-N-JUNCTIONS AND DEVICES
    MNATZAKANOV, TT
    RADIOTEKHNIKA I ELEKTRONIKA, 1977, 22 (02): : 366 - 373
  • [35] CURRENT-VOLTAGE CHARACTERISTIC OF AP-N+-N STURCTURE
    KOMAROVSKIKH, KF
    OSIPOV, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (06): : 748 - +
  • [36] ENERGY SPECTRUM OF HIGH-RESISTIVITY GAAS WITH AN N-TYPE CURRENT-VOLTAGE CHARACTERISTIC
    VOROBEV, YV
    KARKHANI.YI
    TRETYAK, OV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (12): : 1531 - &
  • [37] Effect of Transverse Electric Field on the Longitudinal Current-Voltage Characteristic of Graphene Superlattice
    Kryuchkov, S. V.
    Kukhar, E. I.
    SEMICONDUCTORS, 2016, 50 (02) : 217 - 221
  • [38] CURRENT-VOLTAGE CHARACTERISTICS OF GAAS P-I-N AND N-I-N DIODES
    HRIVNAK, L
    MORVIC, M
    BETKO, J
    SOLID-STATE ELECTRONICS, 1977, 20 (05) : 417 - 419
  • [39] THE THERMAL PROCESSING INFLUENCE ON CURRENT-VOLTAGE CHARACTERISTIC AND INJECTION PROPERTIES OF Ag/n-n(+)GaAs HETEROJUNCTIONS
    Dmitriev, V. S.
    RADIO ELECTRONICS COMPUTER SCIENCE CONTROL, 2018, (02) : 7 - 13
  • [40] CURRENT-VOLTAGE CHARACTERISTIC OF IRRADIATED P-N-JUNCTIONS IN THE REGION OF AVALANCHE BREAKDOWN
    KORSHUNOV, FP
    LASTOVSKY, SB
    MARCHENKO, IG
    TROSCHINSKY, VT
    DOKLADY AKADEMII NAUK BELARUSI, 1992, 36 (7-8): : 589 - 591
12345