The effect of a thermoelectric field on a current-voltage characteristic of the p-Ge-n-GaAs heterojunction

被引：0
|
作者：
M. M. Gadzhialiev
Z. Sh. Pirmagomedov
T. N. Éfendieva
机构：
[1] Russian Academy of Sciences,Amirkhanov Institute of Physics, Dagestan Scientific Center
来源：
Semiconductors | 2004年 / 38卷
关键词：
Temperature Gradient; Heat Flow; Rectification Factor; Magnetic Material; Electromagnetism;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Current-voltage characteristics, which emerge under the effect of oppositely directed temperature gradients, are investigated for “long” Ge-GaAs p-n junctions. The rectification factor increases depending on counter heat flows. This effect is attributed to a thermoelectric field forming at the heterointerface.
引用
收藏
页码：1302 / 1303
页数：1
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