Power switching transistors based on gallium nitride epitaxial heterostructures

被引：0

作者：

Erofeev E.V. ^{[1
]}

Fedin I.V. ^{[2
]}

Yurjev Y.N. ^{[3
]}

机构：

[1] Research Institute of Electrical Communication Systems, Tomsk State University of Control Systems and Radioelectronics, Tomsk

[2] Joint-Stock Research and Production Company Mikran, Tomsk

[3] Physical Technical Institute, Tomsk National Research Polytechnical University, Tomsk

来源：

Russian Microelectronics | 2017年 / 46卷 / 03期

关键词：

D O I：

10.1134/S1063739717020020

中图分类号：

学科分类号：

摘要：

The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V. © 2017, Pleiades Publishing, Ltd.

引用

页码：205 / 210

页数：5

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