Power switching transistors based on gallium nitride epitaxial heterostructures

被引：0
|
作者：
Erofeev E.V. [1 ]
Fedin I.V. [2 ]
Yurjev Y.N. [3 ]
机构：
[1] Research Institute of Electrical Communication Systems, Tomsk State University of Control Systems and Radioelectronics, Tomsk
[2] Joint-Stock Research and Production Company Mikran, Tomsk
[3] Physical Technical Institute, Tomsk National Research Polytechnical University, Tomsk
来源：
Russian Microelectronics | 2017年 / 46卷 / 03期
关键词：
D O I：
10.1134/S1063739717020020
中图分类号：
学科分类号：
摘要：
The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V. © 2017, Pleiades Publishing, Ltd.
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页码：205 / 210
页数：5
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