Ultrafast frequency tuning in diode lasers based on InAsSb/InAsSbP heterostructures operating in the 3–4 μm spectral range

被引:0
|
作者
A. P. Astakhova
T. N. Danilova
A. N. Imenkov
K. V. Kalinina
M. A. Sipovskaya
Yu. P. Yakovlev
机构
[1] Russian Academy of Sciences,Ioffe Physico
来源
Technical Physics Letters | 2008年 / 34卷
关键词
85.60.Bt; 78.60.Fi;
D O I
暂无
中图分类号
学科分类号
摘要
We have studied the quality of frequency of tuning in a diode laser based on a double heterostructures of the n-InAsSbP/n-InAsSb/p-InAsSbP type driven by short current pulses with positive ramp top. It is established that a monotonic increase in the tuned mode frequency with the time is retained during the first 30-µs-long period of current growth. Then, the dependence of the frequency on the current weakens because of the appearance of nontunable modes. The maximum range of monotonic single-frequency tuning is achieved at a small pulse duration (< 30 μs), which shows prospects for the development of ultrafast-response laser diode spectroscopy.
引用
收藏
页码:881 / 883
页数:2
相关论文
共 50 条
  • [21] Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3 mu m
    Danilova, TN
    Danilova, AP
    Ershov, OG
    Imenkov, AN
    Stepanov, MV
    Sherstnev, VV
    Yakovlev, YP
    SEMICONDUCTORS, 1997, 31 (11) : 1200 - 1203
  • [22] Mesa stripe for the 3–3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures
    N. V. Zotova
    S. A. Karandashev
    B. A. Matveev
    M. A. Remennyi
    N. M. Stus’
    G. N. Talalakin
    Technical Physics Letters, 1997, 23 : 41 - 42
  • [23] InAsSb/InAlAsSb quantum-well diode lasers emitting between 3 and 4 mu m
    Turner, GW
    Choi, HK
    Manfra, MJ
    Connors, MK
    INFRARED APPLICATIONS OF SEMICONDUCTORS - MATERIALS, PROCESSING AND DEVICES, 1997, 450 : 3 - 12
  • [24] Photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP heterostructures for 2.5–4.9 μm spectral range
    V. V. Sherstnev
    D. Starostenko
    I. A. Andreev
    G. G. Konovalov
    N. D. Il’inskaya
    O. Yu. Serebrennikova
    Yu. P. Yakovlev
    Technical Physics Letters, 2011, 37 : 5 - 7
  • [25] Mesa stripe for the 3-3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures
    Zotova, NV
    Karandashev, SA
    Matveev, BA
    Remennyi, MA
    Stus', NM
    Talalakin, GN
    TECHNICAL PHYSICS LETTERS, 1997, 23 (01) : 41 - 42
  • [26] Midwave (3-4 mu m) InAsSbP/InGaAsSb infrared diode lasers as a source for gas sensors
    Aidaraliev, M
    Zotova, NV
    Karandashov, SA
    Matveev, BA
    Stus, NM
    Talalakin, GN
    INFRARED PHYSICS & TECHNOLOGY, 1996, 37 (01) : 83 - 86
  • [27] Mid-infrared diode lasers based on III-V alloys for the spectral range 3-4 mu m
    Yakovlev, YP
    Danilova, TN
    Ershov, OG
    Imenkov, AN
    Moiseev, KD
    Mikhailova, MP
    Sherstnev, VV
    Zegrya, GG
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 551 - 556
  • [28] Photodiodes Based on InAs/InAs0.88Sb0.12/InAsSbP Heterostructures for 2.5-4.9 μm Spectral Range
    Sherstnev, V. V.
    Starostenko, D.
    Andreev, I. A.
    Konovalov, G. G.
    Il'inskaya, N. D.
    Serebrennikova, O. Yu.
    Yakovlev, Yu. P.
    TECHNICAL PHYSICS LETTERS, 2011, 37 (01) : 5 - 7
  • [29] UNCOOLED PHOTODIODES BASED ON INASSBP AND GAINASSB FOR 3-5 MU-M SPECTRAL RANGE
    ANDREEV, IA
    BARANOV, AN
    MIKHAILOVA, MP
    MOISEEV, KD
    PENTSOV, AV
    SMORCHKOVA, YP
    SHERSTNEV, VV
    YAKOVLEV, YP
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1992, 18 (17): : 50 - 53
  • [30] Uncooled photodiodes based on InAsSbP/InAs for the spectral range of 3-5 mu-m
    Mikhailova, MP
    Slobodchikov, SV
    Stoyanov, ND
    Stus, NM
    Yakovlev, YP
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1996, 22 (16): : 63 - 66