Fast electron generation under proton interaction with a silicon surface

被引：0
|
作者：
N. V. Novikov
机构：
[1] Moscow State University,Skobeltsyn Research Institute of Nuclear Physics
来源：
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2009年 / 3卷
关键词：
Surface Investigation; Neutron Technique; Silicon Surface; Fast Electron; Inelastic Collision;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The computational procedure for a number of fast electrons generated by ion impact with a surface is proposed. The ionization of 2s and 2p atomic shells is shown to be the main source of fast electrons under proton interaction with a silicon surface. The number of fast electrons does not depend on the angle of ion incidence on a surface with a small number of reflected ions.
引用
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页码：61 / 64
页数：3
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