Distribution of nonequilibrium charge carriers in a nonlinear thin-film capacitor

被引：0
|
作者：
V. A. Volpyas
A. G. Gagarin
A. B. Kozyrev
A. G. Altynnikov
机构：
[1] St. Petersburg State Electrotechnical University,
来源：
Technical Physics Letters | 2007年 / 33卷
关键词：
77.55.+f; 77.22.Ej; 77.80.Fm; 77.22.Jp;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The process of capacitance relaxation between stationary states determined by different values of the bias voltage has been measured and analyzed for a nonlinear thin-film BSTO capacitor. A method used to measure the dynamic capacitance-voltage characteristics is described. The diffusion coefficients and mobilities of nonequilibrium charge carriers and the region of their spatial localization are determined.
引用
收藏
页码：844 / 846
页数：2
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