Microstructure of Epitaxial GaN Layers Synthesized on Nanoprofiled Si(001) Substrates

被引：0
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作者：
A. V. Myasoedov
N. A. Bert
V. N. Bessolov
机构：
[1] Ioffe Institute,
来源：
Crystallography Reports | 2021年 / 66卷
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页码：682 / 686
页数：4
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