Plasma-Chemical and Reactive-Ion Etching of Silicon in Tetrafluoromethane with Argon

被引：0
|
作者：
Murin D.B. [1 ]
Pivovarenok S.A. [1 ]
Kozin A.S. [1 ]
机构：
[1] Federal State Budgetary Educational Institution of Higher Education, Ivanovo State University of Chemistry and Technology, Ivanovo
来源：
Russian Microelectronics | 2022年 / 51卷 / 4期
关键词：
argon; etching; kinetics; plasma; silicon; tetrafluoromethane;
D O I：
10.1134/S106373972203009X
中图分类号：
学科分类号：
摘要：
Abstract: An experimental study is conducted of the influence of the etching time and external parameters of the discharge (bias potential, input power, gas pressure) on the etching rate of silicon in a CF4/Ar mixture. It is shown that the silicon etching process proceeds in the stationary mode. It is found that when a bias potential (–100 or –160 V) is applied to the substrate holder, the silicon etching rate increases significantly. © 2022, Pleiades Publishing, Ltd.
引用
收藏
页码：243 / 246
页数：3
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